SOI Structure and Method for Utilizing Trenches for Signal Isolation and Linearity

ABSTRACT

Disclosed is a structure for improved electrical signal isolation between adjacent devices situated in a top semiconductor layer of the structure and an associated method for the structure&#39;s fabrication. The structure comprises a first portion of a trench extending through the top semiconductor layer and through a base oxide layer below the top semiconductor layer. A handle wafer is situated below the base oxide layer and a second portion of the trench, having sloped sidewalls, extends into the handle wafer. The sloped sidewalls are amorphized by an implant, for example, Xenon or Argon, to reduce carrier mobility in the handle wafer and improve electrical signal isolation between the adjacent devices situated in the top semiconductor layer.

The present application claims the benefit of and priority to a pendingprovisional patent application entitled “SOI Structures UtilizingTrenches for Improved Electrical Signal Isolation and Linearity,” Ser.No. 61/586,696 filed on Jan. 13, 2012. The disclosure in that pendingprovisional application is hereby incorporated fully by reference intothe present application.

BACKGROUND

Silicon on insulator (SOI) structures are commonly utilized where a highdegree of noise isolation or low signal loss is required. Inconventional SOI structures, a conducting inversion layer is typicallypresent at an interface between a base oxide and a high resistivityhandle wafer. Requirements imposed by active devices within SOIstructures also typically demand a top semiconductor layer having a muchlower resistivity than the high resistivity handle wafer. Thecombination of a low resistivity top semiconductor layer and aninversion layer at the base oxide-handle wafer interface results in alossy, non-linear network that degrades isolation and linearity withinSOI structures at high frequencies and power levels.

Attempts to provide a high degree of noise isolation and low signal lossin SOI structures have included forming high resistance portions of thehandle wafer in isolation trenches at the interface between the baseoxide and handle wafer. However, as the area available for isolationtrenches within SOI structures decreases, the effectiveness of suchnarrow high resistance portions of the handle wafer also decreases.

SUMMARY

The present disclosure is directed to silicon on insulator (SOI)structure and method for utilizing trenches for signal isolation andlinearity, substantially as shown in and/or described in connection withat least one of the figures, and as set forth more completely in theclaims.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 illustrates an exemplary cross-sectional view of a conventionalSOI structure for electrical signal isolation and linearity.

FIG. 2A illustrates an exemplary cross-sectional view during fabricationof an SOI structure for improving electrical signal isolation andlinearity, in accordance with one implementation of the presentapplication.

FIG. 2B illustrates an exemplary cross-sectional view during fabricationof an SOI structure for improving electrical signal isolation andlinearity, in accordance with one implementation of the presentapplication.

FIG. 2C illustrates an exemplary cross-sectional view during fabricationof an SOI structure for improving electrical signal isolation andlinearity, in accordance with one implementation of the presentapplication.

FIG. 2D illustrates an exemplary cross-sectional view during fabricationof an SOI structure for improving electrical signal isolation andlinearity, in accordance with one implementation of the presentapplication.

FIG. 3 presents an exemplary flowchart illustrating a method forfabricating an SOI structure for improving electrical signal isolationand linearity, in accordance with one implementation of the presentapplication.

DETAILED DESCRIPTION

The following description contains specific information pertaining toimplementations in the present disclosure. One skilled in the art willrecognize that the present disclosure may be implemented in a mannerdifferent from that specifically discussed herein. The drawings in thepresent application and their accompanying detailed description aredirected to merely exemplary implementations. Unless noted otherwise,like or corresponding elements among the figures may be indicated bylike or corresponding reference numerals. Moreover, the drawings andillustrations in the present application are generally not to scale, andare not intended to correspond to actual relative dimensions.

FIG. 1 illustrates an exemplary cross-sectional view of conventionalsilicon on insulator (SOI) structure 100 for electrical isolation of anactive area including an amorphizing implant in a top surface of handlewafer 102. Conventional SOI structure 100 includes top semiconductorlayer 106 disposed over base oxide layer 104, and handle wafer 102disposed under base oxide layer 104. Trenches 110 a and 110 b havingparallel sidewalls are etched through top semiconductor layer 106 andbase oxide layer 104, terminating at interface 142 between base oxidelayer 104 and underlying handle wafer 102. An amorphizing implant isthen applied to the exposed flat, top surface of handle wafer 102forming amorphized regions 144 and 146 in the bottom of trenches 110 aand 110 b, respectively. Amorphized regions 144 and 146 increase theimpedance of a signal path between adjacent active devices disposed in,or on, top semiconductor layer 106. However, because a signal pathlength along amorphized regions 144 and 146 is limited to the widths oftrenches 110 a and 110 b, the extent to which electrical signalisolation and linearity may be improved is unacceptably limited.Furthermore, as the area available for isolation trenches within SOIstructures continues to decrease, the effectiveness of conventionalisolation trenches continues to decrease.

The fabrication of an SOI structure for improving electrical signalisolation and linearity will now be described with reference to FIGS.2A-2D and FIG. 3, in accordance to one implementation of the presentinvention. FIGS. 2A-2D illustrate exemplary progressive cross-sectionalviews of the fabrication of an SOI structure for improving electricalsignal isolation and linearity, in accordance with one implementation ofthe present application. FIG. 3 shows an exemplary flowchart presentingactions taken to implement a method of fabricating an SOI structure forimproving electrical signal isolation and linearity, in accordance withone implementation of the present application.

FIG. 2A shows a starting wafer after application of an active deviceisolation process commonly used in the fabrication of CMOS technology.Specifically, SOI structure 200 may include top semiconductor layer 206disposed over base oxide layer 204, and base oxide layer 204 disposedover handle wafer 202. Shallow field oxide layers 208 may be disposed ina top surface of top semiconductor layer 206 to provide isolationbetween adjacent active regions of top semiconductor layer 204, forexample. Field oxide layers 208 may have thickness d₁ of 0.3 μm, forexample. Top semiconductor layer 206 may have thickness d₂ of between1.5 μm and 2 μm, for example. And base oxide layer 204 and handle wafer202 may have thicknesses d₃ and d₄, respectively, of 1 μm and up to 725μm, respectively, for example. However, these thicknesses may be greaterthan or less than the above thicknesses depending on the specificrequirements of a particular application.

Referring now to action 310 of flowchart 300, action 310 includesetching a first portion of a trench through a top semiconductor layerand through a base oxide layer below the top semiconductor layer. FIG.2B, for example, illustrates such an action applied to SOI structure 200where trenches 210 a and 210 b are etched through field oxide layer 208,top semiconductor layer 206, and underlying base oxide layer 204. Theetch is complete when the interface between base oxide layer 204 andunderlying handle wafer 202 is reached. Existing methods such as a CF₄based anisotropic dry etch, for example, may be used during etch action310. The width w_(t1) of the first portion of each of trenches 210 a and210 b may be 1.5 μm, for example. However, trench width w_(t1) may begreater than or less than this width to suit the specific needs of aparticular application. Following etching of the first portion of thetrench, a thin oxide layer may be deposited on the sidewalls of thefirst portion of trenches 210 a and 210 b to protect the adjacentsurface of top semiconductor layer 206 from a subsequent heavy inertimplant into underlying handle wafer 202.

Continuing with action 320 of flowchart 300, action 320 includes etchinga second portion of the trench into a handle wafer below the base oxidelayer, the second portion of the trench having sloped sidewalls. FIG.2C, for example, illustrates such an action applied to SOI structure 200where second portions of trenches 210 a and 210 b are etched to a depthd_(t) into handle wafer 202. In one specific example, depth d_(t) may beabout 7 μm. However, depth d_(t) may be greater than or less than thisdepth to suit the specific needs of a particular application.

Action 320 may be carried out by reducing an etchant power as comparedto an etchant power used in action 310, for example, allowing theformation of a narrower portion of trenches 210 a and 210 b to depthd_(t). Additionally, or in the alternative, the width of the etch may bereduced by changing the etch chemistry to make the etch more selective.Though specific etch techniques are disclosed, action 320 may beachieved by any appropriate etching technique known to those of ordinaryskill in the art. Thus, action 320 may result in a modest sloping of thesecond portion of each of trenches 210 a and 210 b such that a bottomportion of trenches 210 a and 210 b tapers to a second width w_(t2). Inone specific example, second width w_(t2) may be 0.5 μm. However, secondwidth w_(t2) may be greater than or less than this width to suit thespecific needs of a particular application. The modest slope of thesidewalls of the second portion of trenches 210 a and 210 b may be, forexample, 15 degrees relative to the sidewalls of the first portions oftrenches 210 a and 210 b. The modest slope of the sidewalls may help toimprove the coverage of a subsequent amorphizing implant applied to thesecond portion of each of trenches 210 a and 210 b.

Continuing with action 330 of flowchart 300, action 330 includesapplying an inert implant to the sloped sidewalls so as to amorphize thesloped sidewalls of the second portion of the trench. FIG. 2D, forexample, illustrates such an action applied to SOI structure 200 whereamorphizing inert implant 250 may be applied at the openings of trenches210 a and 210 b to damage the handle wafer silicon in the slopedtrenches. Amorphizing inert implant 250 may include a heavy element suchas Argon or Xenon, for example, and may be applied at an implant energyof 50 KeV, for example. However, the implant energy may be greater thanor less than 50 KeV, according to the requirements of a particularapplication. To optimally amorphize the sloped trench sidewalls,amorphizing inert implant 250 may be performed at a small angle relativeto the sidewalls of the first portions of trenches 210 a and 210 b.

Amorphized regions 248 a and 248 b may contain a high density of carriertraps that significantly reduce the mobility of carriers in amorphizedregions 248 a and 248 b, as compared to undamaged portions of handlewafer 202. The carrier traps pin carrier density in the amorphizedregions, making the amorphized regions insensitive to any voltagepotential present in top semiconductor layer 206. Thus, amorphizedregions 248 a and 248 b provide superior isolation and linearity betweenadjacent devices situated in top semiconductor layer 206.

Thus, SOI structures for improving electrical signal isolation andlinearity, according to one or more implementations of the presentapplication, provide several advantages over conventional approaches.For example, path lengths along amorphized regions 248 a and 248 b arelimited by depth d_(t) of the second portion of trenches 210 a and 210b, rather than width w_(t1) of the trenches as in conventional SOIstructures discussed above. Thus, the path length through amorphizedregions 248 a and 248 b is advantageously increased from width w_(t1) ofthe trench opening to more than twice depth d_(t) of the second portionof trenches 210 a and 210 b. The increased path length results in anincreased impedance between adjacent devices in top semiconductor layer206 separated by trench 210 a or 210 b, for example. Consequently, anyinversion layer located at interface 242 between base oxide 204 andhandle wafer 202 will have a higher resistivity at the etched siliconsurface of handle wafer 202 due to the increased path length. Thus,substrate related losses are reduced and linearity of the isolateddevices is enhanced.

From the above description it is manifest that various techniques can beused for implementing the concepts described in the present applicationwithout departing from the scope of those concepts. Moreover, while theconcepts have been described with specific reference to certainimplementations, a person of ordinary skill in the art would recognizethat changes can be made in form and detail without departing from thespirit and the scope of those concepts. As such, the describedimplementations are to be considered in all respects as illustrative andnot restrictive. It should also be understood that the presentapplication is not limited to the particular implementations describedherein, but many rearrangements, modifications, and substitutions arepossible without departing from the scope of the present disclosure.

1. A method for improving electrical signal isolation between adjacent devices situated in a top semiconductor layer, said method comprising: etching a first portion of a trench through said top semiconductor layer and a base oxide layer below said top semiconductor layer; etching a second portion of said trench into a handle wafer below said base oxide layer, said second portion of said trench having sloped sidewalls situated within said handle wafer; applying an implant to said sloped sidewalls so as to amorphize said sloped sidewalls of said second portion of said trench.
 2. The method of claim 1, wherein said implant is an inert implant.
 3. The method of claim 1, wherein said implant is selected from the group consisting of Xenon and Argon.
 4. The method of claim 1, wherein said applying said implant to said sloped sidewalls increases an impedance between said adjacent devices situated in said top semiconductor layer.
 5. The method of claim 1, wherein said etching of said first portion and said etching of said second portion of said trench are performed anisotropically.
 6. The method of claim 1, wherein said second portion of said trench having sloped sidewalls is achieved by decreasing an etching power applied to an etchant during said etching said second portion of said trench.
 7. The method of claim 1, wherein said second portion of said trench having sloped sidewalls is achieved by utilizing a selective etch chemistry during said etching said second portion of said trench.
 8. The method of claim 1, wherein said etching of said first portion of said trench is performed using a CF₄-based dry etch.
 9. The method of claim 1, wherein said etching of said second portion of said trench is performed using a CF₄-based dry etch.
 10. A structure for improved electrical signal isolation between adjacent devices situated in a top semiconductor layer of said structure, said structure comprising: a first portion of a trench extending through said top semiconductor layer and through a base oxide layer below said top semiconductor layer; a handle wafer situated below said base oxide layer; a second portion of said trench extending into said handle wafer and having sloped sidewalls; wherein said sloped sidewalls are amorphized, thereby reducing carrier mobility in said handle wafer to improve electrical signal isolation between said adjacent devices situated in said top semiconductor layer.
 11. The structure of claim 10, wherein said sloped sidewalls of said second portion of said trench contain an inert implant.
 12. The structure of claim 10, wherein said sloped sidewalls of said second portion of said trench contain an implant of Argon.
 13. The structure of claim 10, wherein said sloped sidewalls of said second portion of said trench contain an implant of Xenon.
 14. The structure of claim 10, wherein sidewalls of said first portion of said trench comprise an oxide.
 15. The structure of claim 10, wherein said top semiconductor layer comprises silicon.
 16. The structure of claim 10, further comprising a plurality of carrier traps situated in said sloped sidewalls of said second portion of said trench.
 17. A structure for improved electrical signal isolation between adjacent devices situated in a top semiconductor layer of said structure, said structure comprising: a trench extending through said top semiconductor layer, through a base oxide layer below said top semiconductor layer, and into a handle wafer situated below said base oxide layer; an amorphized region of said handle wafer disposed within said trench; wherein said amorphized region reduces carrier mobility in said handle wafer to improve electrical signal isolation between said adjacent devices situated in said top semiconductor layer.
 18. The structure of claim 17, wherein sidewalls of said trench are sloped where said trench extends into said handle wafer.
 19. The structure of claim 17, wherein said amorphized region of said handle wafer contains an implant selected from the group consisting of Xenon and Argon.
 20. The structure of claim 17, wherein said top semiconductor layer comprises silicon. 